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Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
CZRB3011 Thru CZRB3100
Voltage: 11 - 100 Volts Power: 3.0 Watt
Features
- For surf ace mounted applications in order to optimize board space - Low profile package - Built-in strain relief - Glass passivated junction - Low inductance - Excellent clamping capability - Typical ID less than 1uA above 11V - High temperature soldering 260C /10 seconds at terminals - Plastic package has underwriters laboratory flammability classification 94V-O
SMB/DO-214AA
0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06)
0.155(3.94) 0.130(3.30)
0.012(0.31) 0.006(0.15) 0.096(2.44) 0.083(2.13) 0.050(1.27) 0.030(0.76) 0.008(0.20) 0.203(0.10)
0.220(5.59) 0.200(5.08)
Mechanical data
- Case: JEDEC DO-214AA, Molded plastic over passivated junction - Terminals: Solder plated, solderable per MILSTD-750, method 2026 - Polarity: Color band denotes positive end (cathode) except Bidirectional - Standard Packaging: 12mm tape (EIA-481) - Weight: 0.002 ounce, 0.064 gram
Dimensions in inches and (maillimeter)
Maximum Ratings and Electrical Characterics
Ratings at 25C ambient temperature unless otherwise specified.
Rating Peak Pulse Power Dissipation (Note A) Derate above 75 Peak forward Surge Current 8.3ms single half s ine-wave superimposed on rated load (JEDEC Method) (Note B) Operating Junction and Storage Temperature Range
Symbol PD IFSM TJ,TSTG
Value 3 24 15 -55 to +150
Units Watts mW/C Amps C
MDS0303002A
Page 1
Surface Mount Zener Diode
ELECTRICAL CHARACTERISTICS
(TA=25C unless otherwise noted) (V F=1.2Volts Max, IF=500mA for all types.)
COMCHIP
www.comchip.com.tw
Device (Note 1.)
Nominal Zener Voltage VZ @ IZT (Note 2.)
(Volts)
Test current IZT
(mA)
Maximum Zener Impedance (Note 3.) ZZT @ IZT
(Ohms)
Leakage Current IR
(uA)
ZZK @ IZK
(Ohms)
IZK
(mA)
VR
(Volts)
Surge Maximum Current Zener @TA=25C Current IZM (Note 4.)
Madc Ir - mA
CZRB3011 CZRB3012 CZRB3013 CZRB3014 CZRB3015 CZRB3016 CZRB3017 CZRB3018 CZRB3019 CZRB3020 CZRB3022 CZRB3024 CZRB3027 CZRB3028 CZRB3030 CZRB3033 CZRB3036 CZRB3039 CZRB3043 CZRB3047 CZRB3051 CZRB3056 CZRB3062 CZRB3068 CZRB3075 CZRB3082 CZRB3091 CZRB3100
11 12 13 14 15 16 17 18 19 20 22 24 27 28 30 33 36 39 43 47 51 56 62 68 75 82 91 100
68 63 58 53 50 47 44 42 40 37 34 31 28 27 25 23 21 19 17 16 15 13 12 11 10 9.1 8.2 7.5
4 4.5 4.5 5 5.5 5.5 6 6 7 7 8 9 10 12 16 20 22 28 33 38 45 50 55 70 85 95 115 160
700 700 700 700 700 700 750 750 750 750 750 750 750 750 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000
0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
8.4 9.1 9.9 10.6 11.4 12.2 13 13.7 14.4 15.2 16.7 18.2 20.6 21 22.5 25.1 27.4 29.7 32.7 35.6 38.8 42.6 47.1 51.7 56 62.2 69.2 76
225 246 208 193 180 169 150 159 142 135 123 112 100 96 90 82 75 69 63 57 53 48 44 40 36 33 30 27
1.82 1.66 1.54 1.43 1.33 1.25 1.18 1.11 1.05 1.00 0.91 0.83 0.74 0.71 0.67 0.61 0.56 0.51 0.45 0.42 0.39 0.36 0.32 0.29 0.27 0.24 0.22 0.20
NOTE: 1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of 5%. 2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms +- 10ms from the diode body, and an ambient temperature of 25 C (+8C , -2C ). 3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms falue equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. 4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual device capability is as described in Figure 3.
MDS0303002A
Page 2
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CZRB3011 Thru CZRB3100)
30
TRANSIENT THERMAL RESISTANCE JUNCTION-TO-LEAD(C/W)
20 10 7 5 3 2 1 0.7 0.5
D = 0.5
0.2 0.1 0.05
0.02
0.01 0.3 0.0001 0.0002
D=0
NOTE BELOW 0.1 SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L)
SINGLE PULSE TJL = JL(t)PPK REPETITIVE PULSES TJL = JL(t,D)PPK
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Fig. 2-TYPICAL THERMAL RESPONSE L,
PPK, PEAK SURGE POWER(WATTS)
1K
300 200 100 50 30 20 10 .1
.2 .3
RECTANGULAR NONREPETITIVE WAVEFORM TJ = 25C PRIOR TO INITIAL PULSE
IR, REVERSE LEADAGE(uAdc) @VR AS SPECIFIED IN ELEC. CHAR. TABLE
100
500
0.1 0.05 0.03 0.02 0.01 0.005 0.003 0.002 0.001 0.0005 0.0003 0.0002 0.0001
5
1
235
10
20
50
1
2
5
10
20
50
100
200
500
1K
P.W. PULSE WIDTH (ms)
NOMINAL VZ (VOLTS)
Fig. 3-MAXIMUM SURGE POWER
TEMPERATURE COEFFICIENT(mV/C ) @ IZT
8 6 4 2 0 -2 -4
3 4 6 8 10 12 RANGE
Fig. 4-TYPICAL REVERSE LEAKAGE
200
TEMPERATURE COEFFICIENT(mV/C) @ IZT
100
RANGE
50 40 30 20 10
VZ, ZENER VOLTAGE @IZT (VOLTS)
0
20
40
60
80
100
VZ, ZENER VOLTAGE @IZT (VOLTS)
Fig. 5 - UNITS TO 12 VOLTS
Fig. 6 - UNITS 10 TO 100 VOLTS
MDS0303002A
Page 3
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CZRB3011 Thru CZRB3100)
100
100
IZ, ZENER CURRENT (mA)
50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 23 4 5 67 8 9 10
IZ, ZENER CURRENT (mA)
50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
JUNCTION-LEAD THERMAL RESISTANCE (C/W)
80 70 60 50 40 30 20 10 0 0
PRIMARY PATH OF CONDUCTION IS THROUGH THE CATHODE LEAD
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
TYPICAL THERMAL RESISTANCE
MDS0303002A
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Surface Mount Zener Diode
APPLICATION NOTE: Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, T L, should be determined from: TL = LAPD + TA is the lead-to-ambient thermal resistance (C/W) LA and PD is the power dissipation. The value for LA will vary and depends on the device mounting method. LA is generally 30-40 C/W for the various chips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + TJL
COMCHIP
www.comchip.com.tw
TJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses or from Figure 10 for dc power. TJL = LAPD For worst-case design, using expected limits of Iz, limits of PD and the extremes of TJ ( TJL ) may be estimated. Changes in voltage, Vz, can then be found from: V = VZ TJ VZ , the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly be the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capability. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded.
MDS0303002A
Page 5

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